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MFG:TOSHIBA  Package Cooled:DIP6  

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Part Number: TLP747JF

 

MFG: TOSHIBA

Package Cooled: DIP6

 

Description: The TOSHIBA TLP747JF consists of a photo−thyristor optically coupled to a gallium arsenide infra...


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TLP747JF General Description


The TOSHIBA TLP747JF consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. All parameters are tested to the specification of TLP747J. (both condition and limits)

TLP747JF Features

` Peak off−state voltage: 600V (min.)
` Trigger LED current: 15mA (max.)
` On−state current: 150mA (max.)
` UL recognized: UL1577, file No. E67349
` BSI approved: BS EN60065: 1994,
  certificate No. 7364
  BS EN60950: 1992,
  certificate No. 7365
` SEMKO approved: SS4330784, certificate No. 9325163
  No. 9522142
` Isolation voltage: 4000Vrms (min.)
` Option (D4) type
` VDE approved: DIN VDE0884 / 06.92,
  certificate no. 74286, 91808
  Maximum operating insulation voltage: 890, 1130VPK
  Highest permissible over voltage: 6000, 8000VPK
  (Note) When a VDE0884 approved type is needed,
  please designate the " Option (D4) "
` Creepage distance: 8.0mm (min.)
  Clearance: 8.0mm (min.)
  Internal creepage path: 4.0mm (min.)
  Insulation thickness: 0.5mm (min.)
` Conforming safety standards:
  DIN 57 804. VDE0804 / 1.83
  DIN IEC65 / VDE0860 / 8.81
  DIN IEC380 / VDE0806 / 8.81
  DIN IEC435 / VDE0805 / draft Nov.84
  DIN IEC601T1 / VDE0750T1 / 5.82

TLP747JF Connection Diagram

TLP747JF Connection Diagram

TLP747JF datasheet

TLP747JF
PDF/DataSheet Download

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