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MFG:TOS  Package Cooled:DIP-8  D/C:05+  

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Part Number: TLP759F

 

MFG: TOS

Package Cooled: DIP-8

D/C: 05+

Description: The TOSHIBA TLP759F consists of a GaAℓAs high-output light emitting diode and a high speed detec...


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TLP759F General Description


The TOSHIBA TLP759F consists of a GaAℓAs high-output light emitting diode and a high speed detector of one chip photo diodetransistor.

This unit is 8-lead DIP package.

TLP759F has no internal base connection, and a faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity.

So this is suitable for application in noisy environmental condition. All parameters are tested to the specification of TLP759.

TLP759F Features

• Isolation voltage: 5000 Vrms (min.)
• Switching speed: tpHL = 0.3s (typ.) tpHL = 0.5s (typ.) (RL = 1.9 k)
• TTL compatible
• UL recognized: UL1577, file no. E67349
• BSI approved:
BS EN60065:2002, certificate no.8869
BS EN60950-1:2002, certificate no.8870
• Option (D4) type
VDE approved: DIN EN 60747-5-2
Certificate no. 40009302
Maximum operating insulation: 1140VPK
Highest permissible over voltage: 6000VPK

TLP759F Connection Diagram

TLP759F Connection Diagram

TLP759F datasheet

TLP759F
PDF/DataSheet Download

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