TM2561B-L Selling Leads, Price trend, TM2561B-L DataSheet download, circuit diagram from SeekIC.com

Features: Repetitive peak off-state voltage: VDRM=400, 600V RMS on-state current: IT(RMS)=25A Gate trigger current: IGT=30mA max (MODE , , ) Isolation voltage: VISO=2000V(AC, 1min.) UL approved type availableSpecifications Parameter Symbol Ratings Unit Conditions TM2541B-L...

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TM2561B-L: Features: Repetitive peak off-state voltage: VDRM=400, 600V RMS on-state current: IT(RMS)=25A Gate trigger current: IGT=30mA max (MODE , , ) Isolation voltage: VISO=2000V(AC, 1min.) UL approved typ...

TM2561B-L Data Sheet

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Part Number:: TM2561B-L
Supply Ability:: 5000

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Upload time: 2024/4/30

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TM2541B-L evaluate
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Product Details

Description

Features:

Repetitive peak off-state voltage: V^_DRM=400, 600V
RMS on-state current: I^_T(RMS)=25A
Gate trigger current: I^_GT=30mA max (MODE , , )
Isolation voltage: V^_ISO=2000V(AC, 1min.)
UL approved type available

Specifications

Parameter	Symbol	Ratings		Unit	Conditions
Parameter	Symbol	TM2541B-L	TM2561B-L	Unit	Conditions
Repetitive peak off-state voltage	V^_DRM	400	600	V	RGK=, Tj=40°C to +125°C
RMS on-state current	I^_T(RMS)	25		A	Conduction angle 360°,Tc=84°C
Surge on-state current	I^_TSM	240		A	50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage	V^_GM	10		V	f 50Hz, duty 10%
Peak gate current	I^_GM	2		A	f 50Hz, duty 10%
Peak gate power loss	P^_GM	5		W	f 50Hz, duty 10%
Average gate power loss	P^_G(AV)	0.5		W
Junction temperature	T^_j	40 to +125
Storage temperature	T^_stg	40 to +125
Isolation voltage	V^_ISO	2000		Vrms	50Hz Sine wave, RMS, Terminal to Case, 1 min.

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TM2561B-L

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