TMS28F800Axy

` Organization . . . 1048576 By 8 Bits 524288 By 16 Bits
` Array-Blocking Architecture Two 8K-Byte/4K-Word Parameter Blocks One 96K-Byte/48K-Word Main Block Seven 128K-Byte/64K-Word Main Blocks One 16K-Byte/8K-Word Protected Boot Block Top or Bottom Boot Locations
` All Inputs/Outputs TTL-Compatible
` Maximum Access/Minimum Cycle Time 5-V VCC 3-V VCC '28F008Axy70 70 ns 100 ns '28F008Axy80 80 ns 120 ns '28F800Axy70 70 ns 100 ns '28F800Axy80 80 ns 120 ns (See Table 1 for VCC/VPP Voltage Configuration)
` 100000- and 10000-Program/Erase Cycle Versions
` Three Temperature Ranges Commercial . . . 0°C to 70°C Extended . . . 40°C to 85°C Automotive . . . 40°C to 125°C
` Embedded Program/Erase Algorithms Automated Byte Programming Automated Word Programming Automated Block Erase Erase Suspend/Erase Resume
` Automatic Power-Saving Mode
` JEDEC Standards Compatible Compatible With JEDEC Byte/Word Pinouts Compatible With JEDEC EEPROM Command Set
` Fully Automated On-Chip Erase and Byte/Word Program Operations
` Package Options 44-Pin Plastic Small-Outline Package (PSOP) (DBJ Suffix) 40-Pin Thin Small-Outline Package (TSOP) (DCD Suffix) 48-Pin TSOP (DCD Suffix) 48-Ball Micro Ball Grid Array (mBGA) available
` Low Power Dissipation (VCC = 5.5 V) Active Write . . . 330 mW (Byte Write) Active Read . . . 220 mW (Byte Read) Active Write . . . 330 mW (Word Write) Active Read . . . 275 mW (Word Read) Block Erase . . . 330 mW Standby . . . 0.55 mW (CMOS-Input Levels) Deep Power-Down Mode . . . 0.044 mW
` Write-Protection for Boot Block
` Industry Standard Command-State Machine (CSM) Erase Suspend/Resume Algorithm-Selection Identifier
` Flexible VPP/Supply Voltage Combination

Supply voltage range, VCC (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 7 V
Supply voltage range, VPP (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 14 V
Input voltage range: All inputs except A9, RP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to VCC + 1 V
RP, A9 (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 13.5 V
Output voltage range (see Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to VCC + 1 V
Ambient temperature range, TA, during read/erase/program: L suffix . . . . . . . . . . . . . . 0°C to 70°C
E suffix . . . . . . . . . . . . 40°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:
1. All voltage values are with respect to VSS.
2. The voltage on any input or output can undershoot to 2 V for periods of less than 20 ns. See Figure 7.
3. The voltage on any input or output can overshoot to 2 V for periods of less than 20 ns. See Figure 8.

The TMS28F800Axy is a 8388608-bit, boot-block flash memory that can be electrically block-erased and eprogrammed. The TMS28F800Axy is organized in a blocked architecture consisting of:
` One 16K-byte/8K-word protected boot block
` Two 8K-byte/4K-word parameter blocks
` One 96K-byte/48K-word main block
` Seven 128K-byte/64K-word main blocks
The device can be ordered in four different voltage configurations (see Table 1). Operation as a 1024K-byte (8-bit) or a 512K-word (16-bit) organization is user-definable.

Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine progress of program/erase tasks. The device features user-selectable block erasure.

The TMS28F800AEy configuration allows the user to perform memory reads using 2.73.6-V VCC and 5-V VCC for optimum power consumption. Erasing or programming the device can be accomplished with VPP = 3 V, 5 V, or 12-V. This configuration is offered in the commercial temperature range (0°C to 70°C) and the extended temperature range (40°C to 85°C). Also, TMS28F800ASy offers VCC = 3 3.6 V and VCC = 5 V for optimum power  onsumption. The TMS28F800ALy configuration allows performance of memory reads using VCC = 3.0 3.6 V for optimum power consumption. The TMS28F800AVy configuration allows performance of memory reads using VCC = 2.73.6 V for optimum power consumption.

The TMS28F800AZy configuration offers a 5-V memory read with a 3-V/5-V/12-V program and erase. This configuration is offered in three temperature ranges: 0°C to 70°C, 40°C to 85°C, 40°C to 125°C. The TMS28F800Axy is offered in a 44-pin plastic small-outline package (PSOP) and a 48-pin thin small-outline package (TSOP) organized as 16-bit or 8-bit.

The TMS28F008 is functionally equivalent to the 'F800 except that it is organized only as a 8-bit configuration, and it is offered only in a 40-pin TSOP.