TMS29F800B

Features: Single Power Supply Supports 5 V 10%Read/Write Operation Organization...1048576 By 8 Bits524288 By 16 Bits Array-Blocking Architecture One 16K-Byte/One 8K-Word Boot Sector Two 8K-Byte/4K-Word Parameter Sectors One 32K-Byte/16K-Word Sector Fifteen 64K-Byte/32K-Word Sectors Any Combinatio...

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SeekIC No. : 004524866 Detail

TMS29F800B: Features: Single Power Supply Supports 5 V 10%Read/Write Operation Organization...1048576 By 8 Bits524288 By 16 Bits Array-Blocking Architecture One 16K-Byte/One 8K-Word Boot Sector Two 8K-Byte/4K-...

floor Price/Ceiling Price

Part Number:
TMS29F800B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

Single Power Supply Supports 5 V 10%Read/Write Operation Organization...1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture
  One 16K-Byte/One 8K-Word Boot Sector
  Two 8K-Byte/4K-Word Parameter Sectors
  One 32K-Byte/16K-Word Sector
  Fifteen 64K-Byte/32K-Word Sectors
  Any Combination of Sectors Can Be Erased. Supports Full-Chip Erase
  Any Combination of Sectors Can Be Marked as Read-Only Boot-Code Sector Architecture
  T = Top Sector
  B = Bottom Sector Sector Protection
  Hardware Protection Method That Disables Any Combination of Sectors From Write or Erase Operations Using Standard Programming Equipment Embedded Program/Erase Algorithms
  Automatically Pre-Programs and ErasesAny Sector
  Automatically Programs and Verifies the Program Data at Specified Address JEDEC Standards
  Compatible With JEDEC Byte Pinouts
  Compatible With JEDEC EEPROM Command Set Fully Automated On-Chip Erase and Program Operations 100 000 Program/Erase Cycles Low Power Dissipation
  40-mA Typical Active Read for Byte Mode
  50-mA Typical Active Read for Word Mode
  60-mA Typical Program/Erase Current
  Less Than 100-µ A Standby Current
  5 µ A in Deep Power-Down Mode All Inputs/Outputs TTL-Compatible



Pinout

  Connection Diagram


Description

The TMS29F800T/B is an 1048576 by 8-bit/524288 by 16-bit (8388608-bit), 5-V single-supply, programmable
read-only memory device that can be electrically erased and reprogrammed.

This device is organized as 1048576 by 8 bits or 524288 by 16 bits, divided into 19 sectors:
One 16K-byte/8K-word boot sector
Two 8K-byte/4K-word sectors
One 32K-byte/16K-word sector
Fifteen 64K-byte/32K-word sectors
Any combination of sectors can be marked as read-only or erased. Full-chip erasure is also supported.
Sector data protection is afforded by methods that can disable any combination of sectors from write or read
operations using standard programming equipment. An on-chip state machine provides an on-board algorithm
that automatically pre-programs and erases any sector before it automatically programs and verifies program
data at any specified address. The command set is compatible with that of the Joint Electronic Device
Engineering Council (JEDEC) standards and is compatible with the JEDEC 8M-bit electrically erasable,
programmable read-only memory (EEPROM) command set. A suspend/resume feature allows access to
unaltered memory blocks during a section-erase operation. All outputs of this device are TTL-compatible.
Additionally, an erase/suspend/resume feature supports reading data from, or programming data to, a sector
that is not being erased.




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