TMS416160

` Organization . . . 1048576 * 16
` Single Power Supply (5 V or 3.3 V)
` Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME WRITE tRAC tCAC tAA CYCLE MAX MAX MAX MIN '4xx160/P-60 60 ns 15 ns 30 ns 110 ns '4xx160/P-70 70 ns 18 ns 35 ns 130 ns  '4xx160/P-80 80 ns 20 ns 40 ns 150 ns
` Enhanced Page-Mode Operation With CAS-Before-RAS (CBR) Refresh
` Long Refresh Period and Self-Refresh Option (TMS4xx160P)
` 3-State Unlatched Output
` Low Power Dissipation
` High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package and 44/50-Lead (DGE Suffix) Surface-Mount Thin Small-Outline Package (TSOP)
` Operating Free-Air Temperature Range 0°C to 70°C
` Fabricated Using the Texas Instruments Enhanced Performance Implanted CMOS (EPICE) Technology

Supply voltage range, VCC: TMS41x160, TMS41x160P . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
TMS42x160, TMS42x160P . . . . . . . . . . . . . . . . . . . . 0.5 V to 4.6 V
Voltage range on any pin (see Note 1): TMS41x160, TMS41x160P . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V
TMS42x160, TMS42x160P . . . . . . . . . . . . . . . . . . . . 0.5 V to 4.6 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to VSS.

The TMS416160 series is a set of high-speed, 16777216-bit dynamic random-access memories (DRAMs) organized as 1048576 words of 16 bits each. The TMS4xx160P series is a similar set of high-speed, low-power, self-refresh, 16777216-bit DRAMs organized as 1048576 words of 16 bits each. Both sets employ state-of-the-art enhanced performance implanted CMOS (EPICE) technology for high performance, reliability, and low power at low cost.