TN2907A

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Maximum DC Collector Current : 0.8 A
Packaging : Bulk
Package / Case : TO-226


Features:

•This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.
•Sourced from process 63.


Specifications

SYMBOL	PARAMETER	Value	UNIT
VCBO	Collector-base voltage	60	V
VCEO	Collector-emitter voltage	60	V
VEBO	Emitter-base voltage	5	V
IC	Collector Current	800	A
TSTG	Storage temperature	-65 to +150

NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.


Parameters:

Technical/Catalog Information	TN2907A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	800mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	50nA
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN2907A TN2907A