TN5415A

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 4 V
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 200 V
Package / Case : TO-226


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	200	V
VCBO	Collector-Base Voltage	200	V
VEBO	Emitter-Base Voltage	4.0	V
IC	Collector Current - Continuous	100	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameters:

Technical/Catalog Information	TN5415A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	200V
Current - Collector (Ic) (Max)	100mA
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 5mA, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	50A
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN5415A TN5415A