TN6725A

Power Dissipation :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 0.1 uA
Maximum DC Collector Current : 1.2 A
Collector- Base Voltage VCBO : 60 V
Emitter- Base Voltage VEBO : 12 V
Package / Case : TO-226


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	50	V
VCBO	Collector-Base Voltage	60	V
VEBO	Emitter-Base Voltage	12	V
IC	Collector Current - Continuous	1.2	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameters:

Technical/Catalog Information	TN6725A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	1.2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	4000 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 2mA, 200mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN6725A TN6725A