Transistors Bipolar (BJT) PNP Dbl-Dif SI Exptl Plnr
TN6727A: Transistors Bipolar (BJT) PNP Dbl-Dif SI Exptl Plnr
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V | ||
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1.5 A | ||
| DC Collector/Base Gain hfe Min : | 50 | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-226 | Packaging : | Bulk |
|
Symbol |
Parameter |
Value |
Units |
|
VCEO |
Collector-Emitter Voltage |
40 |
V |
|
VCBO |
Collector-Base Voltage |
50 |
V |
|
VEBO |
Emitter-Base Voltage |
5 |
V |
|
IC |
Collector Current - Continuous |
1.5 |
mA |
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
| Technical/Catalog Information | TN6727A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 1.5A |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 1V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226 |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TN6727A TN6727A |