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TN6Q04

Features: • Quasi-resonant type original control IC.• High voltage power MOSFET with current sense.• Low input voltage protection (self reset)• Overvoltage protection (latch).• Overcurrent protection (pulse-by-pulse).Specifications Parameter Symbol Conditions ...

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SeekIC No. : 004525376 Detail

TN6Q04: Features: • Quasi-resonant type original control IC.• High voltage power MOSFET with current sense.• Low input voltage protection (self reset)• Overvoltage protection (latch)...

TN6Q04 Data Sheet

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Part Number:
TN6Q04
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/14

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Product Details

Description



Features:

• Quasi-resonant type original control IC.
• High voltage power MOSFET with current sense.
• Low input voltage protection (self reset)
• Overvoltage protection (latch).
• Overcurrent protection (pulse-by-pulse).




Specifications

Parameter Symbol Conditions Ratings Unit
[All voltage parameters are absolute voltage referenced to GND]
Drain-to-Source Voltage VDSS 3-5 650 V
Drain Current (DC) ID 3-5 5.5 A
Drain Current (Pulse) IDP 3-5 PW10s, duty cycle1% 16.5 A
VDD Pin Applied Voltage VDD 4-5 -0.3 to 16.7 V
FB Pin Applied Voltage VFB 1-5 -0.3 to VDD+0.3 V
EDGE Pin Applied Voltage VEDGE 2-5 -0.3 to VDD+0.3 V
Allowable Power Dissipation PD 2 W
Tc=25 35 W
Operating Temperature Topr -25 to +125
Junction Temperature Tj 150
Storage Temperature Tstg -55 to +150
Avalanche Energy (Single Pulse) *1 EAS 3-5 155 mJ
Avalanche Current *2 IAV 3-5 5.5 A
*1 VDD=50V, L=10mH, IAV=5.5A
*2 L10mH, single pulse

Absolute maximum ratings
VDS [V] 650
ID [A] 5.5
Electrical characteristics
RDS(on) typ [] 1.2
RDS(on) max [] 1.6
ID [A] 2.8
VDD[V] 15
Input Voltage 1 [VAC] 220
Max Power [W] 180
Input Voltage 2 [VAC] WIDE
Max Power [W] 90





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