TP0101TS

Packaging :
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : TO-236-3
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 650 mOhms at 4.5 V


Description

The benifits and application fields of TP0101TS can be summarized as (1)ease in driving switches; (2)low offset (error) voltage; (3)low-voltage operation; (4)high-speed circuits; (5)low battery voltage operation, (can be applicated in following fields)(6)drivers: relays, solenoids, lamps, hammers, displays, memories; (7)battery operated systems, DC/DC converters; (8)power supply converter circuits; (9)load/power switchingcell phones, pagers.

The features of TP0101TS can be summarized as (1)high-side switching; (2)low on-resistance: 0.45; (3)low threshold: 0.9 V (typ); (4)fast switching speed: 32 ns; (5)2.5-V or lower operation.

The absolute maximum ratings of TP0101TS are (1)drain-source voltage VDS: 20V; (2)gate-source voltage VGS ±8V; (3)continuous drain current (TJ = 150°C) ID: -1.0(TA= 25°C)/-0.8A(TA=70°C); (4)pulsed drain currenta IDM: 3A; (5)continuous source current (diode conduction) IS: 1.0A; (6)power dissipation PD: 1.0(TA= 25°C)/0.65W(TA=70°C); (7)operating junction and storage temperature range TJ, Tstg : 55 to 150 °C.