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TPC8009-H(TE12L,Q)

MOSFET N-CH SINGLE 30V 13A SOP-8

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SeekIC No. : 003433785 Detail

TPC8009-H(TE12L,Q): MOSFET N-CH SINGLE 30V 13A SOP-8

TPC8009-H(TE12L,Q) Data Sheet

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Part Number:
TPC8009-H(TE12L,Q)
Mfg:
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/6/19

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 13A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 6.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) @ Vgs: 29nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1460pF @ 10V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25° C: 13A
Power - Max: -
Gate Charge (Qg) @ Vgs: 29nC @ 10V
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Manufacturer: Toshiba
Supplier Device Package: 8-SOP (5.5x6.0)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds: 1460pF @ 10V


Parameters:

Technical/Catalog InformationTPC8009-H(TE12L,Q)
VendorToshiba (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs10 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds 1460pF @ 10V
Power - Max1.9W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / Case8-SOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPC8009 H TE12L,Q
TPC8009HTE12L,Q
TPC8009 HQCT ND
TPC8009HQCTND
TPC8009-HQCT



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