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TPC8018-H(TE12L)

MOSFET N-CH 30V 18A 8-SOP

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SeekIC No. : 003433804 Detail

TPC8018-H(TE12L): MOSFET N-CH 30V 18A 8-SOP

TPC8018-H(TE12L) Data Sheet

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Part Number:
TPC8018-H(TE12L)
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 18A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) @ Vgs: 38nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2265pF @ 10V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 18A
Power - Max: -
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Manufacturer: Toshiba
Supplier Device Package: 8-SOP (5.5x6.0)
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds: 2265pF @ 10V


Parameters:

Technical/Catalog InformationTPC8018-H(TE12L)
VendorToshiba (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs4.6 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 2265pF @ 10V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / Case8-SOP
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names TPC8018 H TE12L
TPC8018HTE12L
TPC8018 HCT ND
TPC8018HCTND
TPC8018-HCT



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