TPC8107 Selling Leads, Price trend, TPC8107 DataSheet download, circuit diagram from SeekIC.com

Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) = 5.5 m (typ.)`High forward transfer admittance: |Yfs| = 31 S (typ.)`Low leakage current: IDSS = −10 A (max) (VDS = −30 V)`Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −...

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SeekIC No. : 004526157 Detail

TPC8107: Features: `Small footprint due to small and thin package`Low drain-source ON resistance: R DS (ON) = 5.5 m (typ.)`High forward transfer admittance: |Yfs| = 31 S (typ.)`Low leakage current: IDSS = &#...

TPC8107 Data Sheet

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Part Number:: TPC8107
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/28

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US $.38 - .46 / Piece

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Product Details

Description

Features:

`Small footprint due to small and thin package
`Low drain-source ON resistance: R_{DS (ON)} = 5.5 m (typ.)
`High forward transfer admittance: |Yfs| = 31 S (typ.)
`Low leakage current: I_DSS = −10 A (max) (V_DS = −30 V)
`Enhancement-mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	−30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	− 13	A
Drain current	Pulse (Note 1)	I_DP	-52	A
Drain power dissipation (Tc=25)		P_D	1.9	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	1.0	W
Single pulse avalanche energy (Note3)		E_AS	219	mJ
Avalanche current		I_AR	− 13	A
Repetitive avalanche energy (Tc=25) (Note 4)		E_AR	0.19	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution..

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TPC8107

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