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TPC8107(TE12L,Q,M): MOSFET MOSFET P-Ch 30V 13A Rdson=0.007Ohm

TPC8107(TE12L,Q,M) Data Sheet

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Part Number:: TPC8107(TE12L,Q,M)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/4/28

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Product Details

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	13 A
Resistance Drain-Source RDS (on) :	0.007 Ohms	Configuration :	Single Quad Drain Triple Source
Mounting Style :	SMD/SMT	Package / Case :	SOP-8
Packaging :	Reel

Description

Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.007 Ohms
Package / Case : SOP-8

Parameters:

Technical/Catalog Information	TPC8107(TE12L,Q,M)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	7 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	5880pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	2-6J1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPC8107 TE12L,Q,M TPC8107TE12L,Q,M

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