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TPC8114(TE12L,Q,M)

MOSFET MOSFET P-Ch 30V 18A Rdson=0.0045Ohm

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SeekIC No. : 00164158 Detail

TPC8114(TE12L,Q,M): MOSFET MOSFET P-Ch 30V 18A Rdson=0.0045Ohm

TPC8114(TE12L,Q,M) Data Sheet

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Part Number:
TPC8114(TE12L,Q,M)
Mfg:
Toshiba
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 6.8 mOhms Configuration : Single
Mounting Style : SMD/SMT Package / Case : SOP-8
Packaging : Reel    

Description

Gate-Source Breakdown Voltage :
Continuous Drain Current :
Maximum Operating Temperature :
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 30 V
Resistance Drain-Source RDS (on) : 6.8 mOhms
Package / Case : SOP-8


Parameters:

Technical/Catalog InformationTPC8114(TE12L,Q,M)
VendorToshiba (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs4.5 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 7480pF @ 10V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPC8114 TE12L,Q,M
TPC8114TE12L,Q,M
TPC8114TE12LQMCT ND
TPC8114TE12LQMCTND
TPC8114TE12LQMCT



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