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SeekIC No. : 00164237 Detail

TPC8116-H(TE12LQ,M: MOSFET MOSFET P-Ch 40V 7.5A

TPC8116-H(TE12LQ,M Data Sheet

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Part Number:: TPC8116-H(TE12LQ,M
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2025/12/6

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 40 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	7.5 A
Resistance Drain-Source RDS (on) :	0.03 Ohms	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOP-8	Packaging :	Reel

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 7.5 A
Drain-Source Breakdown Voltage : - 40 V
Resistance Drain-Source RDS (on) : 0.03 Ohms
Package / Case : SOP-8

Parameters:

Technical/Catalog Information	TPC8116-H(TE12LQ,M
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	30 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds	1190pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	2-6J1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPC8116 H TE12LQ,M TPC8116HTE12LQ,M

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TPC8116-H(TE12LQ,M

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