Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 24 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 6.8 m (typ.)• High forward transfer admittance: |Yfs| = 46S (typ.)• Low leakage current: IDSS = 10 A...
TPCA8005-H: Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 24 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 6.8 m (typ.)...
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Features: • Small footprint due to small and thin package• High speed switching•...

|
Characteristics |
Symbol |
Ratingt |
Uni | |
| Drain-source voltage |
VDSS |
30 |
V | |
| Drain-gate voltage (RGS = 20 k) |
VDGR |
30 |
V | |
| Gate-source voltage |
VGSS |
±20 |
V | |
| Drain current | DC (Note 1) |
ID |
30 |
A |
| Pulsed (Note 1) |
IDP |
90 | ||
| Drain power dissipation (Tc=25) |
PD |
45 |
W | |
| Drain power dissipation (t = 10 s) (Note 2a) |
PD |
2.8 |
W | |
| Drain power dissipation (t = 10 s) (Note 2b) |
PD |
1.6 |
W | |
| Single pulse avalanche energy (Note 3) |
EAS |
117 |
mJ | |
| Avalanche current |
IAR |
30 |
A | |
| Repetitive avalanche energy (Tc=25) (Note 4) |
EAR |
4.5 |
mJ | |
| Channel temperature |
Tch |
150 |
||
| Storage temperature range |
Tstg |
−55 to 150 |
||