TPCA8014-H(TE12L,QM

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 40V
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Package / Case: 8-PowerVDFN
Power - Max: 45W
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Manufacturer: Toshiba
Supplier Device Package: 8-SOP Advance
Input Capacitance (Ciss) @ Vds: 1365pF @ 10V


Parameters:

Technical/Catalog Information	TPCA8014-H(TE12L,QM
Vendor	Toshiba (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	9 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1365pF @ 10V
Power - Max	45W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	8-SOPA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCA8014 H TE12L,QM TPCA8014HTE12L,QM TPCA8014HTE12LQDKR ND TPCA8014HTE12LQDKRND TPCA8014HTE12LQDKR