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Application• Low drain-source ON resistance: RDS (ON) = 21 m (typ.)• High forward transfer admittance: |Yfs| = 9.6 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −30 V)• Enhancement mode: Vth = −0.8 to −2.0 V(VDS = −10 V, ID = −...

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SeekIC No. : 004526204 Detail

TPCF8104: Application• Low drain-source ON resistance: RDS (ON) = 21 m (typ.)• High forward transfer admittance: |Yfs| = 9.6 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = &#...

TPCF8104 Data Sheet

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Part Number:: TPCF8104
Supply Ability:: 5000

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Product Details

Description

Application

• Low drain-source ON resistance: R_{DS (ON)} = 21 m (typ.)
• High forward transfer admittance: |Y_fs| = 9.6 S (typ.)
• Low leakage current: I_DSS = −10 A (max) (V_DS = −30 V)
• Enhancement mode: V_th = −0.8 to −2.0 V
(V_DS = −10 V, I_D= −1mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−30	V
Drain?gate voltage (RGS = 20 k)		V_DGR	−30	V
Gate?source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	I_D	−6	A
Drain current	Pulse (Note 1)	I_DP	−24	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.5	W
Drain power dissipation (t = 5 s) (Note 2b)		P_D	0.7	W
Single pulse avalanche energy (Note 3)		E_AS	5.8	mJ
Avalanche current		I_AR	−3	A
Repetitive avalanche energy (Note 4)		E_AR	0.25	mJ
Channel temperature		T_ch	150
Storage temperature range		T_STG	-55 ~ 150

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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