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TPCF8B01(TE85L,F,M

MOSFET MOSFET P-Ch SBD 20V 2.7A

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SeekIC No. : 00157819 Detail

TPCF8B01(TE85L,F,M: MOSFET MOSFET P-Ch SBD 20V 2.7A

TPCF8B01(TE85L,F,M Data Sheet

floor Price/Ceiling Price

US $ .16~.16 / Piece | Get Latest Price
Part Number:
TPCF8B01(TE85L,F,M
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~3100
  • 3100~4000
  • Unit Price
  • $.16
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2026/1/13

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 0.11 Ohms Configuration : Single Dual Drain
Mounting Style : SMD/SMT Package / Case : VS-8
Packaging : Reel    

Description

Maximum Operating Temperature :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.11 Ohms
Continuous Drain Current : 2.7 A
Configuration : Single Dual Drain
Package / Case : VS-8


Parameters:

Technical/Catalog InformationTPCF8B01(TE85L,F,M
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.7A
Rds On (Max) @ Id, Vgs110 mOhm @ 1.4A, 4.5V
Input Capacitance (Ciss) @ Vds 470pF @ 10V
Power - Max1.35W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6nC @ 5V
Package / Case*
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPCF8B01 TE85L,F,M
TPCF8B01TE85L,F,M



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