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TPCS8009-H(TE12L,Q: MOSFET MOSFET NCh 150V 2.1A Rdson=0.35Ohm

TPCS8009-H(TE12L,Q Data Sheet

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Part Number:: TPCS8009-H(TE12L,Q
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2025/12/8

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What is this?

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	150 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	2.1 A
Resistance Drain-Source RDS (on) :	0.35 Ohms	Configuration :	Single Quad Drain Triple Source
Mounting Style :	SMD/SMT	Package / Case :	TSSOP-8
Packaging :	Reel

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.35 Ohms
Package / Case : TSSOP-8
Continuous Drain Current : 2.1 A

Parameters:

Technical/Catalog Information	TPCS8009-H(TE12L,Q
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	2.1A
Rds On (Max) @ Id, Vgs	350 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	2-3R1F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCS8009 H TE12L,Q TPCS8009HTE12L,Q

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