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TPD1008SA

Features: A monolithic power IC with a new structure combining a control block(BiCMOS) and a vertical power MOS FET (MOS) on a single chip One side of load can be grounded to a high-side switch. Can directly drive a power load from a microprocessor.Builtin protection against thermal shutdown and ...

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TPD1008SA: Features: A monolithic power IC with a new structure combining a control block(BiCMOS) and a vertical power MOS FET (MOS) on a single chip One side of load can be grounded to a high-side switch. Ca...

TPD1008SA Data Sheet

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Part Number:
TPD1008SA
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

A monolithic power IC with a new structure combining a control block
(BiCMOS) and a vertical power MOS FET (MOS) on a single chip
One side of load can be grounded to a high-side switch.
Can directly drive a power load from a microprocessor.
Builtin protection against thermal shutdown and load short circuiting
Incorporates a diagnosis function that allows diagnosis output to be
read externally at load short-circuiting, opening, or overtemperature.
Up to −10V of counter-electromotive force from an L load can be
applied.
Low on-resistance : RDS (ON) = 200m (max)
Low operating current : IDD = 1mA (typ.) (@VDD = 12V, VIN = 0V)
5-pin TO−220 insulated package
Three standard lead configurations


Specifications

Characteristics Symbol Rating Unit
Drain-source Voltage VDS 60 V
Supply Voltage DC VDD (1) 25 V
Pulse VDD (2) 60 (Rs = 1, = 250ms) V
Input Voltage DC VIN (1) −0.5~12 V
Pulse VIN (2) VDD (1) + 1.5 (t = 100ms) V
Diagnosis Output Voltage VDIAG −0.5~25 V
Output Current IO Internally Limited A
Input Current IIN ±10 mA
Diagnosis Output Current IDIAG 5 mA
Power Dissipation Tc = 25 PD (1) 30 W
Ta = 25 PD (2) 2 W
Operating Temperature Topr −40~110
Junction Temperature Tj 150
Storage Temperature Tstg −55~150
Lead Temperature/Time TSOL 275 (5s), 260 (10s)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




Description

The TPD1008SA is a monolithic power IC for high-side switches. The TPD1008SA IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection and diagnostic functions.




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