TPR 1000

SpecificationsMaximum Power Dissipation @250C22900 Watts Maximum Voltage and CurrentBVces Collector to Base Voltage65 VoltsBVeboEmitter to Base Voltage 3.5 VoltsIc Collector Current 80 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200 0COperating Junction Temperature + 2000CDescriptionThe ...

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TPR 1000 Picture
SeekIC No. : 004526458 Detail

TPR 1000: SpecificationsMaximum Power Dissipation @250C22900 Watts Maximum Voltage and CurrentBVces Collector to Base Voltage65 VoltsBVeboEmitter to Base Voltage 3.5 VoltsIc Collector Current 80 AmpsMaximum T...

floor Price/Ceiling Price

Part Number:
TPR 1000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Specifications

Maximum Power Dissipation @250C2                2900 Watts
Maximum Voltage and Current
BVces          Collector to Base Voltage                    65 Volts
BVebo          Emitter to Base Voltage                    3.5 Volts
Ic Collector Current 80 Amps
Maximum Temperatures
Storage Temperature                                - 65 to + 200 0C
Operating Junction Temperature                           + 2000C



Description

The TPR 1000 is a high power COMMON BASE bipolar transistor. TPR 1000 is designed for pulsed systems in the frequency band 1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input returns for fast rise time. Low thermal resistance package reduces junction temperature, extends life.




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