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TPS1100Y

Features: Low rDS(on) . . . 0.18 at VGS = 10 V3-V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th) = 1.5 V MaxESD Protection Up to 2 kV per MIL-STD-883C, Method 3015PinoutSpecifications UNIT Drain-to-source voltage, VDS 15 V Gate-to-source voltage, VGS ...

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SeekIC No. : 004526466 Detail

TPS1100Y: Features: Low rDS(on) . . . 0.18 at VGS = 10 V3-V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th) = 1.5 V MaxESD Protection Up to 2 kV per MIL-STD-883C, Method 3015PinoutSpe...

TPS1100Y Data Sheet

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Part Number:
TPS1100Y
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Low rDS(on) . . . 0.18 at VGS = 10 V
 3-V Compatible
 Requires No External VCC
 TTL and CMOS Compatible Inputs
 VGS(th) = 1.5 V Max
 ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 


Pinout

Connection Diagram




Specifications

 
UNIT
Drain-to-source voltage, VDS
15
V
Gate-to-source voltage, VGS
2 or 15
V

Continuous drain current (TJ = 150°C) ID‡
 VGS = 2.7 V D package
TA = 25°C
±0.41
A
TA= 125°C
±0.28
PW package
TA = 25°C
±0.4
TA = 125°C
±0.23
VGS = 3 V D package
TA = 25°C
±0.6
TA = 125°C
±033
PW package
TA = 25°C
±0.33
TA = 125°C
±0.27
VGS = 4.5 V D package
TA = 25°C
±1
TA = 125°C
±047
PW package
TA = 25°C
±0.81
TA = 125°C
±0.37
VGS = 10 V D package
TA = 25°C
±1.6
TA = 125°C
±0.72
PW package
TA = 25°C
1.27
TA= 125°C
±58
Pulsed drain current, ID‡
TA = 25°C
±7
A
Continuous source current (diode conduction), IS
TA = 25°C
1
A
Storage temperature range, Tstg
55 to 150
°C
Operating junction temperature range, TJ
40 to 150
°C
Operating free-air temperature range, TA
40 to 125
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C



Description

The TPS1100 is a single P-channel enhancement-mode MOSFET. The TPS1100 device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSE process. With a maximum VGS(th) of 1.5 V and an IDSS of only 0.5 A, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage of TPS1100 is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.




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