TPS1120DG4, US $ .79-1.29 , Texas Instruments, TPS1120DG4 DataSheet download, circuit diagram from SeekIC.com

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TPS1120DG4: MOSFET Dual P-Ch Enh-Mode MOSFET

TPS1120DG4 Data Sheet

US $ .79~1.29 / Piece | Get Latest Price

Part Number:: TPS1120DG4
Mfg:: Texas Instruments
Supply Ability:: 5000

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$1.29
$1.08
$.93
$.79

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US $.67 - .98 / Piece

MOSFET MOSFET 10ns RT

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	15 V
Gate-Source Breakdown Voltage :	+ 2 V, - 15 V	Continuous Drain Current :	- 2.7 V
Resistance Drain-Source RDS (on) :	0.18 Ohms	Configuration :	Dual Dual Drain
Maximum Operating Temperature :	+ 125 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8	Packaging :	Tube

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : SOIC-8
Maximum Operating Temperature : + 125 C
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.18 Ohms
Drain-Source Breakdown Voltage : 15 V
Continuous Drain Current : - 2.7 V
Gate-Source Breakdown Voltage : + 2 V, - 15 V

Parameters:

Technical/Catalog Information	TPS1120DG4
Vendor	Texas Instruments
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	15V
Current - Continuous Drain (Id) @ 25° C	1.17A
Rds On (Max) @ Id, Vgs	180 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	840mW
Packaging	Tube
Gate Charge (Qg) @ Vgs	5.45nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	296; 4040047-2; D; 8
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPS1120DG4 TPS1120DG4

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TPS1120DG4

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