DescriptionThe TPS608A is a kind of photo darlington transisitor. It is silicon NPN epitaxial planar. The device is designed for photo interrupter, photoelectric counter, position and rotational speed sensor as well as automatic control unit. There are some features of TPS608Aas follows: (1)fast r...
TPS608A: DescriptionThe TPS608A is a kind of photo darlington transisitor. It is silicon NPN epitaxial planar. The device is designed for photo interrupter, photoelectric counter, position and rotational spe...
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The TPS608A is a kind of photo darlington transisitor. It is silicon NPN epitaxial planar. The device is designed for photo interrupter, photoelectric counter, position and rotational speed sensor as well as automatic control unit. There are some features of TPS608A as follows: (1)fast response speed; (2)the same external shape as the infared LED TLN107A, and is best suited for combination with TLN107A as a photo interrupter.
What comes next is about the maximum ratings of TPS608A (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -25 to 85; (6)storage temperature, Tstg: -40 to 100.
The following is about the electrical characteristics of TPS608A (Ta=25): (1)dark current, ID (ICEO): 0.005A typ and 0.1A at VCE=24 V, E=0; (2)light current, IL(IC): 40A min and 100A typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.15 V typ and 0.4 V max at IC=15A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 6s typ at VCC=5 V, IC=2 mA, RL=100; fall time, tf: 6s typ at VCC=5 V, IC=2 mA, RL=100; (5)peak sensitivity wavelength, P: 820 nm typ; (6)half value angle, 1/2: ±15°typ.