DescriptionThe TPS618 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for photo interrupter, photoelectric counter, position and rotational speed sensor as well as automatic control unit. There are some features of TPS618 as follows: (1)fast response speed...
TPS618: DescriptionThe TPS618 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for photo interrupter, photoelectric counter, position and rotational speed sensor as ...
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The TPS618 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for photo interrupter, photoelectric counter, position and rotational speed sensor as well as automatic control unit. There are some features of TPS618 as follows: (1)fast response speed; (2)the same external shaped as the infrared LED TLN107A, and is best suited for combination with TLN107A as a photo interrupter; (3)visible light cut type (black package).
What comes next is about the maximum ratings of TPS618 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -25 to 85; (6)storage temperature, Tstg: -40 to 100.
The following is about the electrical characteristics of TPS618 (Ta=25): (1)dark current, ID (ICEO): 0.005A typ and 0.1A at VCE=24 V, E=0; (2)light current, IL(IC): 27A min and 70A typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.15 V typ and 0.4 V max at IC=10A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 6s typ at VCC=5 V, IC=2 mA, RL=100; fall time, tf: 6s typ at VCC=5 V, IC=2 mA, RL=100; (5)peak sensitivity wavelength, P: 870 nm typ; (6)half value angle, 1/2: ±15°typ.