RF Amplifier Bluetooth Two Stage HBT Power Amplifier
TQP770001: RF Amplifier Bluetooth Two Stage HBT Power Amplifier
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| Operating Frequency : | 2.4 GHz to 2.5 GHz | Packaging : | Reel |
Bluetooth v2.0 + EDR class 1 systems

| Parameter | Symbol | Min. | Max. | Units |
| Power Supply Voltage Power Supply Voltage |
VCC VCC, RF Applied |
- - |
6 5 |
V V |
| Bias and reference Voltage Bias power control voltage |
PA_ON (PA_On = Ven = Venable) P_C (Vctrl = P_CTRL) |
- - |
5 5 |
V V |
| DC Supply current Storage Temperature |
ICC TSTORAGE |
- -40 |
250 85 |
mA |
| Operating Case Temperature Maximum input power |
TC PI |
-5 - |
85 5 |
dBm |
The TQP770001 Bluetooth PA is designed on TriQuint's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. The PA TQP770001 is a two-stage design requiring several SMD tuning elements for input and output matching, gain shaping, and bias injection. Features of TQP770001 include an integrated bias controller with a power control (variable gain) function. The bias controller also acts to provide temperature compensation. The PA is housed in a 2.0 mm x 2.0 mm 12 pin STSLP package with a grounded back paddle. A recommended drawing is provided in section 4.3.2. This PA is designed to operate in Bluetooth v2.0 class 1 systems. TQP770001 is also intended to be Enhanced Data Rate (EDR) compliant with Bluetooth v2.0 + EDR specification for both 2 Mbps and 3 Mbps modulation modes.
| Technical/Catalog Information | TQP770001 |
| Vendor | Triquint Semiconductor Inc |
| Category | RF and RFID |
| Package / Case | 12-QFN |
| Voltage - Supply | 3V ~ 3.6V |
| Current - Supply | 250mA |
| Gain | 27dB |
| Frequency | 2.4GHz ~ 2.5GHz |
| RF Type | Bluetooth |
| Packaging | Tape & Reel (TR) |
| Noise Figure | - |
| P1db | - |
| Test Frequency | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TQP770001 TQP770001 |