TS1220-600B

On-State RMS Current (It RMS) :
Rated Repetitive Off-State Voltage VDRM : 600 V
Gate Trigger Voltage (Vgt) : 0.8 V
Holding Current (Ih Max) : 5 mA
Forward Voltage Drop : 1.6 V
Mounting Style : SMD/SMT
Off-State Leakage Current @ VDRM IDRM : 5 uA
Maximum Gate Peak Inverse Voltage : 8 V
Gate Trigger Current (Igt) : 0.2 mA
Package / Case : TO-252
Packaging : Tube
Breakover Current IBO Max : 115 A


Features:

·IT(RMS) = 12A
·VDRM/VRRM = 600V
·IGT < 200µA
·HIGH ITSM = 110A (tp = 10ms)


Specifications

Symbol	Parameter		Value	Unit
VDRM VRRM	Repetitive peak off-state voltage Tj = 125°C RGK = 220 Ω		600	V
IT(RMS)	RMS on-state current (180° conduction angle)	Tc= 105°C	12	A
IT(AV)	Average on-state current (180° conduction angle)	Tc= 105°C	8	A
ITSM	Non repetitive surge peak on-state current (Tj initial = 25°C )	tp = 10 ms	110	A
		tp = 8.3 ms	115
I2t	I2t Value for fusing	tp = 10 ms	40	A2s
dI/dt	Critical rate of rise of on-state current IG = 10 mA dIG /dt = 0.1 A/µs.		50	A/µs
Tstg Tj	Storage junction temperature range Operating junction temperature range		- 40 to + 150 - 40 to + 125	°C
T	Maximum temperature for soldering during 10s		260	°C

Description

The TS1220-600B is using a high performance  TOPGLASS PNPN technology and is intended for  applications requiring high surge capability (like power tools, crowbar protection, capacitive dis- charge ignition...).

Parameters:

Technical/Catalog Information	TS1220-600B
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
SCR Type	Sensitive Gate
Voltage - Off State	600V
Current - On State (It (RMS) (Max)	12A
Current - On State (It (AV)) (Max)	8A
Current - Gate Trigger (Igt) (Max)	200A
Current - Hold (Ih) (Max)	5mA
Current - Non Rep. Surge 50, 60Hz (Itsm)	110A, 115A
Voltage - Gate Trigger (Vgt) (Max)	800mV
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TS1220 600B TS1220600B