TSAL5100

Beam Angle :
Packaging : Bulk
Package / Case : T-1 3/4
Wavelength : 940 nm
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C
Radiant Intensity : 1000 mW/sr


Features:

` Extra high radiant power and radiant intensity
` High reliability
` Low forward voltage
` Suitable for high pulse current operation
` Standard T1 <sub>3/4</sub> (ø 5 mm) package
` Angle of half intensity j = ± 10⁰
` Peak wavelength p = 940 nm
` Good spectral matching to Si photodetectors




Application

·Infrared remote control units with high power requirements
·Free air transmission systems
·Infrared source for optical counters and card readers
·IR source for smoke detectors




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward Current		IF	100	mA
Peak Forward Current	tp/T = 0.5, tp = 100s	IFM	200	mA
Surge Forward Current	tp = 100 s	IFSM	1.5	A
Power Dissipation		PV	210	mW
Junction Temperature		Tj	100
Operating Temperature Range		Tamb	55...+100
Storage Temperature Range		Tstg	55...+100
Soldering Temperature	t 5sec, 2 mm from case	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	350	K/W

Description

TSAL5100,High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.

In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters TSAL5100 are
ideally suitable as high performance replacements of standard emitters.