TSAL5300

Infrared Emitters High Power 940nm 5 Volt 35mW 22 Deg

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SeekIC No. : 0018927 Detail

TSAL5300: Infrared Emitters High Power 940nm 5 Volt 35mW 22 Deg

floor Price/Ceiling Price

US $ .18~.33 / Piece | Get Latest Price
Part Number:
TSAL5300
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~50
  • 50~100
  • Unit Price
  • $.33
  • $.26
  • $.2
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Wavelength : 950 nm Radiant Intensity : 350 mW/sr
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 55 C
Package / Case : T-1 3/4 Packaging : Bulk    

Description

Beam Angle :
Packaging : Bulk
Package / Case : T-1 3/4
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C
Wavelength : 950 nm
Radiant Intensity : 350 mW/sr


Features:

` Extra high radiant power and radiant intensity
` Low forward voltage
` Suitable for high pulse current operation
` Standard T1 3/4 (ø 5 mm) package
` Angle of half intensity j = ± 220
` Peak wavelengthp = 940 nm
` High reliability
` Good spectral matching to Si photodetectors





Application

·Infrared remote control units with high power requirements
·Free air transmission systems
·Infrared source for optical counters and card readers
·IR source for smoke detectors





Specifications

Parameter Test Conditions
Symbol
Value
Unit
Reverse Voltage
VR
5
V
Forward Current
IF
100
mA
Peak Forward Current tp/T = 0.5, tp = 100s
IFM
200
mA
Surge Forward Current tp = 100 s
IFSM
1,5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
Operating Temperature Range
Tamb
55...+100
Storage Temperature Range
Tstg
55...+100
Soldering Temperature t 5sec, 2 mm from case
Tsd
260
Thermal Resistance Junction/Ambient
RthJA
350
K/W





Description

TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.

In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters of the TSAL5300 are
ideally suitable as high performance replacements of standard emitters.






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