Infrared Emitters 17 Degree 40mW
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Wavelength : | 940 nm | Beam Angle : | +/- 17 |
Radiant Intensity : | 60 mW/sr | Maximum Operating Temperature : | + 100 C |
Minimum Operating Temperature : | - 55 C | Package / Case : | T-1 3/4 |
Packaging : | Bulk |
Parameter | Test Conditions |
Symbol |
Value |
Unit |
Reverse Voltage |
VR |
5 |
V | |
Forward Current |
IF |
100 |
mA | |
Peak Forward Current | tp/T = 0.5, tp = 100s |
IFM |
200 |
mA |
Surge Forward Current | tp = 100 s |
IFSM |
1.5 |
A |
Power Dissipation |
PV |
210 |
mW | |
Junction Temperature |
Tj |
100 |
||
Operating Temperature Range |
Tamb |
55...+100 |
||
Storage Temperature Range |
Tstg |
55...+100 |
||
Soldering Temperature | t 5sec, 2 mm from case |
Tsd |
260 |
|
Thermal Resistance Junction/Ambient |
RthJA |
350 |
K/W |
TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters of the TSAL6200 are ideally suitable as high performance replacements of standard emitters.