TSHA5200

Infrared Emitters 5V 22mW 875nm 12 Deg

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SeekIC No. : 0018842 Detail

TSHA5200: Infrared Emitters 5V 22mW 875nm 12 Deg

floor Price/Ceiling Price

US $ .13~.17 / Piece | Get Latest Price
Part Number:
TSHA5200
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~50
  • 50~100
  • Unit Price
  • $.17
  • $.16
  • $.14
  • $.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Wavelength : 875 nm Radiant Intensity : 500 mW/sr
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 55 C
Package / Case : T-1 3/4 Packaging : Bulk    

Description

Beam Angle :
Packaging : Bulk
Package / Case : T-1 3/4
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C
Radiant Intensity : 500 mW/sr
Wavelength : 875 nm


Features:

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC





Application

• Infrared remote control and free air data transmission systems
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass






Specifications

PARAMETER TEST CONDITION SYMBOL VALUE UNITS
Reverse voltage VR 5 V
Forward current IF 100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 2.5 A
Power dissipation PV 180 mW





Description

The TSHA5200 series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.






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