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Part Number: TSIL6400

 

 

 

 

Description: TSIL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, b...


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TSIL6400 General Description


TSIL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.

In comparison with the standard GaAs on GaAs technology these emitters achieve about 70 % radiant power improvement at a similar wavelength.

The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

TSIL6400 Maximum Ratings

Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
VR
5
V
Forward Current
IF
100
mA
Peak Forward Current
tp/T=0.5, tp=100s
IFM
200
mA
Surge Forward Current
tp=100s
IFSM
1.5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
Operating Temperature Range
Tamb
55...+100
Storage Temperature Range
Tstg
55...+100
Soldering Temperature
t 5sec, 2 mm from case
Tsd
260
Thermal Resistance Junction/Ambient
RthJA
350
K/W

TSIL6400 Features

`Extra high radiant power and radiant intensity
`Low forward voltage
`Suitable for high pulse current operation
`Standard T1 3/4 (ø 5 mm) package
`Angle of half intensity = ± 17°
`Peak wavelength p = 925 nm
`High reliability
`Good spectral matching to Si photodetectors

TSIL6400 Typical Application

·Infrared remote control units with high power requirements
·Free air transmission systems
·Infrared source for optical counters and card readers
·IR source for smoke detectors

TSIL6400 datasheet

TSI
PDF/DataSheet Download

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