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TSKS5412X01

Features: ` Side view case with spherical lens` Radiation direction perpendicular to mounting direction` Angle of half intensity = ± 30°` Peak wavelength p = 950 nm` Case compatible with TEKS5412` Option X01: High rel. device for advanced applications` Fan-fold packing according to IEC 286 part 2`...

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TSKS5412X01: Features: ` Side view case with spherical lens` Radiation direction perpendicular to mounting direction` Angle of half intensity = ± 30°` Peak wavelength p = 950 nm` Case compatible with TEKS5412` O...

TSKS5412X01 Data Sheet

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Part Number:
TSKS5412X01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

` Side view case with spherical lens
` Radiation direction perpendicular to mounting direction
` Angle of half intensity = ± 30 °
` Peak wavelength p = 950 nm
` Case compatible with TEKS5412
` Option X01: High rel. device for advanced applications
` Fan-fold packing according to IEC 286 part 2
` Packing AMMOPACK: 2,000 pcs
` Ordering code number: TSKS5412X01ASZ
` Visual inspection according to QSV 5610


Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 6 V
Forward Current   IF 100 mA
Surge Forward Current tp100s IFSM 2 A
Power Dissipation   PV 170 mW
Junction Temperature   Tj 100
Operating Temperature Range   Tstg 40...+85
Storage Temperature Range   Tstg 40...+100
Soldering Temperature t 5 s, 2 mm from body Tsd 260
Thermal Resistance Junction/Ambient   RthJA 450 K/W



Description

TSKS5412X01 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the TSKS5412X01 photodetector, allowing the user to assemble his own optical sensor.




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