TSM12N02 Selling Leads, Price trend, TSM12N02 DataSheet download, circuit diagram from SeekIC.com

Features: Advanced trench process technologyLow gate chargeHigh Density Cell Design for Ultra Low On-ResistanceFully Characterized Avalanche Voltage and Current High performance technology for low RDS(ON)Fast switching speedSpecifications Parameter Symbol Limit Unit Drain-Source V...

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TSM12N02: Features: Advanced trench process technologyLow gate chargeHigh Density Cell Design for Ultra Low On-ResistanceFully Characterized Avalanche Voltage and Current High performance technology for low R...

TSM12N02 Data Sheet

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Part Number:: TSM12N02
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Month Sales

268 Transactions

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Upload time: 2025/12/15

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Recent History
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Product Details

Description

Features:

Advanced trench process technology
Low gate charge
High Density Cell Design for Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
High performance technology for low RDS(ON)
Fast switching speed

Specifications

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DSS	20	V
Gate-Source Voltage		V_GSS	±12	V
Continuous Drain Current		I_D	12	A
Pulsed Drain Current		I_DM	30	A
Maximum Power Dissipation	T_A = 25	P_D	1.3	W
Maximum Power Dissipation	T_A= 100	P_D	2	W/
Operating Junction Temperature		T_J	+150
Operating Junction and Storage Temperature Range		T_J, T_STG	-55 to +150

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TSM12N02

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