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TSM2301

Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilitiesCompact and low profile SOT-23 packageSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20V V Gate-Source...

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SeekIC No. : 004529637 Detail

TSM2301: Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilitiesCompact and low profile SOT-23 packageSpecifications ...

TSM2301 Data Sheet

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Part Number:
TSM2301
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/13

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Product Details

Description



Features:

  Advanced trench process technology
  High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
 Compact and low profile SOT-23 package




Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 20V
V
Gate-Source Voltage
VGS
± 8
V
Continuous Drain Current
ID
-2.3
A
Pulsed Drain Current
IDM
-10
A
Maximum Power Dissipation
 Ta = 25
PD
1.25
W
Ta = 75
0.8
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150



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