Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Ga...
TSM2312: Features: Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Specificatio...
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|
Parameter |
Symbol |
Limit |
Unit | |
|
Drain-Source Voltage |
VDS |
20V |
V | |
|
Gate-Source Voltage |
VGS |
±8 |
V | |
|
Continuous Drain Current |
ID |
5 |
A | |
|
Pulsed Drain Current |
IDM |
15 |
A | |
|
Maximum Power Dissipation |
Ta = 25 |
PD |
1.25 |
W |
|
Ta = 75 |
0.8 | |||
|
Operating Junction Temperature |
TJ |
+150 |
||
|
Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |
||