Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· High input impedance Advanced trench process technology· High density cell design for ultra low on-resistance· High input impedance· High speed switching· High speed switching· No minori...
TSM2N7002E: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· High input impedance Advanced trench process technology· High density cell design for ...
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| Parameter |
Symbol |
Limit |
Unit | |
| Drain-Source Voltage |
VDS |
50 |
V | |
| Gate-Source Voltage |
VGS |
± 20 |
V | |
| Continuous Drain Current |
ID |
250 |
mA | |
| Pulsed Drain Current |
IDM |
1.0 |
A | |
| Maximum Power Dissipation | Ta = 25 |
PD |
200 |
mW |
| Ta = 75 |
150 |
|||
| Operating Junction Temperature |
TJ |
+150 |
||
| Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |
||
| Thermal Performance | ||||
| Lead Temperature (1/8" from case) |
TL |
5 |
S | |
| Junction to Ambient Thermal Resistance (PCB mounted) |
Rja |
625 |
/W | |