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TSM35N03

Features: ·Advanced trench process technology ·High Density Cell Design for Ultra Low On-Resistance·Fully Characterized Avalanche Voltage and Current ·Specially Designed for DC/DC Converters and Motor DriversSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V...

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TSM35N03: Features: ·Advanced trench process technology ·High Density Cell Design for Ultra Low On-Resistance·Fully Characterized Avalanche Voltage and Current ·Specially Designed for DC/DC Converters and Mot...

TSM35N03 Data Sheet

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Part Number:
TSM35N03
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Description



Features:

·Advanced trench process technology              
·High Density Cell Design for Ultra Low On-Resistance
·Fully Characterized Avalanche Voltage and Current
·Specially Designed for DC/DC Converters and Motor Drivers
 


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 50 A
Pulsed Drain Current ID 350
Maximum Power Dissipation TA = 25 PD 57 W
TA = 100 23 W/
Operating Junction Temperature TJ +150
Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150
Single Pulse Drain to Source Avalanche Energy
(VDD= 100V, VGS =10V, IAS =2A, L=10mH, RG =25)

EAS 300 mJ



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