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TSM3900D

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID 2 A Pulsed Drai...

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TSM3900D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V ...

TSM3900D Data Sheet

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Part Number:
TSM3900D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance


Specifications

Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
ID
2
A
Pulsed Drain Current
IDM
8
A
Continuous Source Current (Diode Conduction)a,b
IS
1.6
A
Maximum Power Dissipation Ta = 25
PD
2.0
W
Ta = 70
1.3
Operating Junction Temperature
TJ
+150
Operating Junction and Storage Temperature Range TJ, TSTG
-55 to +150
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 5 sec.


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