Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication High-Side DC/DC Conversion Notebook SeverSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Contin...
TSM4392: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication High-Side DC/DC Conversion Notebook SeverSpecifications Parameter Symbol Limit...
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| Parameter |
Symbol |
Limit |
Unit | |
| Drain-Source Voltage |
VDS |
30 |
V | |
| Gate-Source Voltage |
VGS |
±20 |
V | |
| Continuous Drain Current |
ID |
12.5 |
A | |
| Pulsed Drain Current |
IDM |
50 |
A | |
| Continuous Source Current (Diode Conduction)a,b |
IS |
2.7 |
||
| Maximum Power Dissipation | Ta = 25 |
PD |
3.0 |
W |
| Ta = 75 |
1.9 | |||
| Operating Junction Temperature |
TJ |
+150 |
||
| Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |
||