Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Curren...
TSM9433: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain-So...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Parameter |
Symbol |
Limit |
Unit | |
| Drain-Source Voltage |
VDS |
-20 |
V | |
| Gate-Source Voltage |
VGS |
±12 |
V | |
| Continuous Drain Current. |
ID |
-5.4 |
A | |
| Pulsed Drain Current |
IDM |
-20 |
A | |
| Continuous Source Current (Diode Conduction)a,b |
IS |
-2.6 |
A | |
| Maximum Power Dissipation | Ta = 25 |
PD |
2.5 |
W |
| Ta = 75 |
1.6 | |||
| Operating Junction Temperature |
TJ |
+150 |
||
| Operating Junction and Storage Temperature Range |
TJ, TSTG |
-55 to +150 |
||
| Thermal Performance | ||||
| Parameter |
Symbol |
Limit |
Unit | |
| Junction to Case Thermal Resistance |
RJC |
3 |
/W | |
| Junction to Ambient Thermal Resistance (PCB mounted) |
RJA |
50 |
/W | |