TST0912

Features:

35 dBm output power
Power-added efficiency (PAE) 50%
Single supply operation at 3 V no negative voltage necessary
Current consumption in power-down mode  10 A, no external power-supply switch required
Power-ramp control
Simple input and output matching
Simple output matching for maximum flexibility
SMD package (PSSOP16 with heat slug)


Pinout




Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit
Supply voltage VCC  Pin 5                                 Pins 1, 2 and 3                                 Pins 11, 12, 13 and 14                                 Pin 9	VCC1 VCC2 VCC3 VCC, CTL			5.0	V
Input power              Pin 6	Pin			12	dBm
Gain-control voltage  Pin 8	VCTL	0		2.2	V
Duty cycle for operation				25	%
Burst duration	tburst			1.2	ms
External voltage for mode switch Pin 16	VSW	0		VCC	V
Junction temperature	Tj			+ 150	°C
Storage temperature	Tstg	40		+150	°C

Description

The TST0912 is a monolithic integrated power amplifier IC. The device is manufactured using TEMIC Semiconductors' Silicon-Germanium (SiGe) technology and has been designed for use in GSM 900-MHz mobile phones.

With a single supply voltage operation of 3 V and a neglectable leakage current in power-down mode, the TST0912 needs few external components and reduces system costs.