TST0922

Features:

34.5 dBm output power
Power Added Efficiency (PAE) 50 %
Single-supply operation at 3 V no negative voltage necessary
Current consumption in power-down mode 10 A
No external power-supply switch required
Power-ramp control
Simple output matching for maximum flexibility
Flipchip package


Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit
Supply voltage	VCC			5.0	V
Input power              Pin 6	Pin			13	dBm
Gain-control voltage  Pin 8	VCTL	0		2.2	V
Duty cycle for operation				25	%
Burst duration	tburst			1.2	ms
Junction temperature	Tj			+ 150	°C
Storage temperature	Tstg	40		+150	°C

Description

The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors' Silicon-Germanium (SiGe) technology and has been designed for use in GSM 900 MHz mobile phones.

With a single supply voltage of 3 V and a neglectable leackage current in power-down mode the TST0922 needs few external components and no high-side switch transistor which reduces system cost.