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TSUS520

Features: `Low cost emitter`Low forward voltage`High radiant power and radiant intensity`Suitable for DC and high pulse current operation`Standard T (ø 5 mm) package`Angle of half intensity j = ± 15`Peak wavelength p = 950 nm`High reliability`Good spectral matching to Si photodetectorsAppli...

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SeekIC No. : 004530730 Detail

TSUS520: Features: `Low cost emitter`Low forward voltage`High radiant power and radiant intensity`Suitable for DC and high pulse current operation`Standard T (ø 5 mm) package`Angle of half intensity j...

TSUS520 Data Sheet

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Part Number:
TSUS520
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

`Low cost emitter
`Low forward voltage
`High radiant power and radiant intensity
`Suitable for DC and high pulse current operation
`Standard T (ø 5 mm) package
`Angle of half intensity j = ± 15
`Peak wavelength p = 950 nm
`High reliability
`Good spectral matching to Si photodetectors


Application

Infrared remote control and free air transmission systems with low forward voltage and low cost requirements in combination with PIN photodiodes or phototransistors.


Specifications

Parameter Test Conditions Symbol Value Unit
Reverse voltage   VR 5 V
Forward current   IF 150 mA
Surge forward current tp/T=0.5, tp=100s IFM 300 mA
Surge Forward Current tp=100 s IFSM 2.5 A
Power dissipation   PV 210 mW
Junction temperature   Tj 100
Operating temperature range   Tstg 55...+100
Storage temperature range   Tstg 55...+100
Soldering temperature t 5 sec, 2 mm from body Tsd 260
Thermal resistance junction/ ambient   RthJA 375 K/W



Description

TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, bluegrey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors.




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