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TT2138LS

Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Pinout Specifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 1500 V VCEO ...

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TT2138LS: Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Pinout Speci...

TT2138LS Data Sheet

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Part Number:
TT2138LS
Supply Ability:
5000

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Product Details

Description



Features:

• High speed.
• High breakdown voltage (VCBO=1500V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.




Pinout






Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 1500 V
VCEO Collector to emitter voltage 800 V
VEBO Emitter to base voltage 5 V
IC Collector current 3.5 A
ICP Collector current (pulse) 9 A
PC Collector dissipation 2.0 W
PC Collector dissipationTC = 25 25
W
Tj Junction temperature 150
Tstg Storage temperaturerange -55 to +150


Absolute maximum ratings
VCBO [V] 1500
VCEO [V] 800
IC [A] 3.5
PC[W] 25
Tc=25°C
Electrical characteristics
hFE min 5
hFE max 8
VCE [V] 5
IC [A] 2
VCE (sat) max [V] 3
IC [A] 1.8
IB [A] 0.36
tf max [µs] 0.3





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