Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switching applications (switching regulator, driver circuit).Pinout Specifications Parameter Symbol C...
TT3031NP: Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switchin...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Parameter | Symbol | Conditions | Ratings | Unit |
| Collector-to-Base Voltage | VCBO | -50 | V | |
| Collector-to-Emitter Voltage | VCEO | -50 | V | |
| Emitter-to-Base Voltage | VEBO | -6 | V | |
| Drain Current (DC) | IC | -3 | A | |
| Drain Current (Pulse) | ICP | PW1s, duty cycle10% | -5 | A |
| Base Current | IB | Tc=25 | -1 | A |
| Collector Dissipation | PC | 0.8 | W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 3 |
| PC [W] | 0.8 |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 500 |
| VCE [V] | 2 |
| IC [A] | 0.125 |
| VCE (sat) typ [V] | 0.25 |
| VCE (sat) max [V] | 0.5 |
| IC [A] | 2.5 |
| IB [mA] | 125 |